发明申请
- 专利标题: WAVEGUIDE HETEROSTRUCTURE FOR DISPERSION COMPENSATION IN SEMICONDUCTOR LASER
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申请号: US16652514申请日: 2018-09-27
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公开(公告)号: US20200287353A1公开(公告)日: 2020-09-10
- 发明人: Jérôme FAIST , Yves BIDAUX , Filippos KAPSALIDIS
- 申请人: ETH Zürich
- 申请人地址: CH Zürich
- 专利权人: ETH Zürich
- 当前专利权人: ETH Zürich
- 当前专利权人地址: CH Zürich
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@250e5ce2
- 国际申请: PCT/EP2018/076281 WO 20180927
- 主分类号: H01S5/34
- IPC分类号: H01S5/34 ; H01S5/10 ; H01S5/32 ; H01S5/00 ; H01S5/227
摘要:
A waveguide heterostructure for a semiconductor laser with an active part, comprising an active region layer depending of the type of semiconductor used, which is sandwiched between an electrode layer and a substrate, usable for dispersion compensation in a semiconductor laser frequency comb setup, an optical frequency comb setup and a manufacturing method.
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