Invention Application
- Patent Title: TOP ELECTRODE FOR DEVICE STRUCTURES IN INTERCONNECT
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Application No.: US16693566Application Date: 2019-11-25
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Publication No.: US20200098983A1Publication Date: 2020-03-26
- Inventor: Hsia-Wei Chen , Wen-Ting Chu , Kuo-Chi Tu , Chih-Yang Chang , Chin-Chieh Yang , Yu-Wen Liao , Wen-Chun You , Sheng-Hung Shih
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24

Abstract:
Some embodiments relate to a device. The device includes a top electrode and a via disposed over the top electrode. A peripheral upper surface of the top electrode is above a central upper surface of the top electrode, and a tapered inner sidewall of the top electrode connects the peripheral upper surface to the central upper surface. The via establishes electrical contact with the tapered inner sidewall but is spaced apart from the central upper surface.
Public/Granted literature
- US10862029B2 Top electrode for device structures in interconnect Public/Granted day:2020-12-08
Information query
IPC分类: