Invention Grant
- Patent Title: Top electrode for device structures in interconnect
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Application No.: US16693566Application Date: 2019-11-25
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Publication No.: US10862029B2Publication Date: 2020-12-08
- Inventor: Hsia-Wei Chen , Wen-Ting Chu , Kuo-Chi Tu , Chih-Yang Chang , Chin-Chieh Yang , Yu-Wen Liao , Wen-Chun You , Sheng-Hung Shih
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24

Abstract:
Some embodiments relate to a device. The device includes a top electrode and a via disposed over the top electrode. A peripheral upper surface of the top electrode is above a central upper surface of the top electrode, and a tapered inner sidewall of the top electrode connects the peripheral upper surface to the central upper surface. The via establishes electrical contact with the tapered inner sidewall but is spaced apart from the central upper surface.
Public/Granted literature
- US20200098983A1 TOP ELECTRODE FOR DEVICE STRUCTURES IN INTERCONNECT Public/Granted day:2020-03-26
Information query
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