发明申请
- 专利标题: SEMICONDUCTOR DEVICE
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申请号: US16446043申请日: 2019-06-19
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公开(公告)号: US20190305089A1公开(公告)日: 2019-10-03
- 发明人: Shoji KITAMURA
- 申请人: FUJI ELECTRIC CO., LTD.
- 申请人地址: JP Kawasaki-shi
- 专利权人: FUJI ELECTRIC CO., LTD.
- 当前专利权人: FUJI ELECTRIC CO., LTD.
- 当前专利权人地址: JP Kawasaki-shi
- 主分类号: H01L29/16
- IPC分类号: H01L29/16 ; H01L29/06 ; H01L29/66 ; H01L29/36 ; H01L21/04 ; H01L29/872
摘要:
In an edge termination structure portion, first and second JTE regions are disposed concentrically surrounding an active region. Between the first and second JTE regions, a p-type electric field relaxation region is disposed that includes a first subregion and a second subregion alternately and repeatedly arranged concentrically surround a periphery of the first JTE region. An average impurity concentration of the electric field relaxation region is higher that the impurity concentration of the first JTE region adjacent on the inner side and lower than the impurity concentration of the second JTE region adjacent on the outer side. First subregions have widths that decrease the farther outward they are arranged. Second subregions have widths that are substantially the same independent of position. The first subregions and the first JTE region have equal impurity concentrations. The second subregions and the second JTE region have equal impurity concentrations.
公开/授权文献
- US10727304B2 Semiconductor device 公开/授权日:2020-07-28
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