- 专利标题: NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF
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申请号: US16414893申请日: 2019-05-17
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公开(公告)号: US20190278487A1公开(公告)日: 2019-09-12
- 发明人: Youngjin CHO , Sungyong Seo , Sun-Young Lim , Uksong Kang , Chankyung Kim , Duckhyun Chang , JinHyeok Choi
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2015-0170115 20151201; KR10-2015-0170119 20151201; KR10-2015-0170123 20151201; KR10-2015-0171660 20151203; KR10-20150171665 20151203
- 主分类号: G06F3/06
- IPC分类号: G06F3/06 ; G06F12/0893 ; G11C11/00 ; G06F13/16 ; G06F12/0868 ; G11C16/26 ; G11C16/10
摘要:
A nonvolatile memory device includes a nonvolatile memory, a volatile memory being a cache memory of the nonvolatile memory, and a first controller configured to control the nonvolatile memory. The nonvolatile memory device further includes a second controller configured to receive a device write command and an address, and transmit, to the volatile memory through a first bus, a first read command and the address and a first write command and the address sequentially, and transmit a second write command and the address to the first controller through a second bus, in response to the reception of the device write command and the address.
公开/授权文献
- US11106363B2 Nonvolatile memory device and operation method thereof 公开/授权日:2021-08-31
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