Invention Application
- Patent Title: TUNNELING FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME
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Application No.: US15821860Application Date: 2017-11-24
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Publication No.: US20190131453A1Publication Date: 2019-05-02
- Inventor: Chun-Hao Lin , Chun-Jung Tang , Hsin-Yu Chen , Shou-Wei Hsieh
- Applicant: UNITED MICROELECTRONICS CORP.
- Priority: CN201711026937.6 20171027
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L29/06 ; H01L29/10 ; H01L29/423 ; H01L21/762
Abstract:
A tunnel field effect transistor (TFET) includes: a first gate structure on a substrate; a source region having a first conductive type on one side of the first gate structure; a drain region having a second conductive type on another side of the first gate structure; a first isolation structure adjacent to the source region; and a second isolation structure adjacent to the drain region. Preferably, the first isolation and the second isolation comprise different material and different depths or same material and different depths.
Public/Granted literature
- US10347761B2 Tunneling field effect transistor and method for fabricating the same Public/Granted day:2019-07-09
Information query
IPC分类:
