- 专利标题: QUANTUM DOT DEVICES WITH FINE-PITCHED GATES
-
申请号: US16017942申请日: 2018-06-25
-
公开(公告)号: US20190043989A1公开(公告)日: 2019-02-07
- 发明人: Nicole K. Thomas , Ravi Pillarisetty , Kanwaljit Singh , Hubert C. George , David J. Michalak , Lester Lampert , Zachary R. Yoscovits , Roman Caudillo , Jeanette M. Roberts , James S. Clarke
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L29/778 ; H01L29/66 ; H01L23/522 ; H01L29/06
摘要:
Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; a first gate above the quantum well stack, wherein the first gate includes a first gate metal and a first gate dielectric layer; and a second gate above the quantum well stack, wherein the second gate includes a second gate metal and a second gate dielectric layer, and the second gate dielectric layer extends over the first gate.
公开/授权文献
- US11417765B2 Quantum dot devices with fine-pitched gates 公开/授权日:2022-08-16
信息查询
IPC分类: