Invention Application
- Patent Title: METHOD OF PATTERNING SEMICONDUCTOR DEVICE
-
Application No.: US15423544Application Date: 2017-02-02
-
Publication No.: US20180218917A1Publication Date: 2018-08-02
- Inventor: En-Chiuan Liou , Hon-Huei Liu , Chia-Hung Lin , Yu-Cheng Tung
- Applicant: UNITED MICROELECTRONICS CORP.
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/033 ; H01L21/66
Abstract:
A method of patterning a semiconductor device includes following steps. First of all, a substrate is provided, and a first target pattern is formed in the substrate. Next, a second target pattern is formed on the substrate, across the first target pattern. Then, a third pattern is formed on a hard mask layer formed on the substrate, by using an electron beam apparatus, wherein two opposite edges of the third pattern are formed under an asymmetry control.
Public/Granted literature
- US10418290B2 Method of patterning semiconductor device Public/Granted day:2019-09-17
Information query
IPC分类:
