- 专利标题: MEMORY WITH MARGIN CURRENT ADDITION AND RELATED METHODS
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申请号: US15476618申请日: 2017-03-31
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公开(公告)号: US20180040380A1公开(公告)日: 2018-02-08
- 发明人: Emanuela Calvetti , Marcella Carissimi , Marco Pasotti
- 申请人: STMicroelectronics S.r.l.
- 主分类号: G11C16/24
- IPC分类号: G11C16/24 ; G11C11/16 ; G11C16/10 ; G11C13/00 ; G11C16/26 ; G11C16/34
摘要:
In accordance with an embodiment, a circuit includes a sense amplifier circuit configured to sense a difference between a first current based on a direct memory bit and a second current based on a complementary memory bit. The direct memory bit is coupled to a first input of the sense amplifier circuit, and the complementary memory bit is coupled to a second input of the sense amplifier circuit. A controller is configured to, during a sense operation, selectively add a first margin current to the first current, and during the sense operation, selectively add a second margin current to the second current.
公开/授权文献
- US09991000B2 Memory with margin current addition and related methods 公开/授权日:2018-06-05
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