- 专利标题： SEMICONDUCTOR DEVICE WITH BURIED CONDUCTIVE REGION, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
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申请号： US15250638申请日： 2016-08-29
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公开(公告)号： US20170250253A1公开(公告)日： 2017-08-31
- 发明人: Fabrizio Fausto Renzo Toia , Claudio Contiero , Elisabetta Pizzi , Simone Dario Mariani
- 申请人： STMICROELECTRONICS S.R.L.
- 优先权： IT102016000019688 20160225
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/40 ; H01L29/78
摘要：
A semiconductor device comprising: a semiconductor body including an active region that houses an electronic component and a passive dielectric region surrounding the active region; a conductive buried region, of metallic material or metallic alloy, which extends in the semiconductor body in the active region; and one or more electrical contacts, of metallic material, which extend between the conductive buried region and a top surface of the semiconductor body, and form respective paths for electrical access to the conductive buried region.
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