- 专利标题: SILICON GERMANIUM FIN CHANNEL FORMATION
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申请号: US15467100申请日: 2017-03-23
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公开(公告)号: US20170194481A1公开(公告)日: 2017-07-06
- 发明人: Hong He , Nicolas Loubet , Junli Wang
- 申请人: INTERNATIONAL BUSINESS MACHINES CORPORATION , STMicroelectronics, Inc.
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L29/161 ; H01L29/49 ; H01L29/66
摘要:
A method for channel formation in a fin transistor includes removing a dummy gate and dielectric from a dummy gate structure to expose a region of an underlying fin and depositing an amorphous layer including Ge over the region of the underlying fin. The amorphous layer is oxidized to condense out Ge and diffuse the Ge into the region of the underlying fin to form a channel region with Ge in the fin.
公开/授权文献
- US10062783B2 Silicon germanium fin channel formation 公开/授权日:2018-08-28
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