Invention Application
- Patent Title: SEMICONDUCTOR MEMORY DEVICE
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Application No.: US15371062Application Date: 2016-12-06
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Publication No.: US20170194039A1Publication Date: 2017-07-06
- Inventor: Toshihiko FUNAKI
- Applicant: Renesas Electronics Corporation
- Priority: JP2016-000976 20160106
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C5/06 ; G11C7/22 ; G11C5/02

Abstract:
A stack memory includes a base chip, a memory chip stacked over the base chip, and a via 42 provided between the base chip and the memory chip. The base chip has an external interface circuit and a late write control circuit. The external interface circuit externally receives/transmits write data and read data. The late write control circuit has at least a register storing write data externally supplied through the external interface circuit. The memory chip has a memory cell array and a late write control circuit having at least a register storing write data supplied from the register through the via.
Public/Granted literature
- US10224080B2 Semiconductor memory device with late write feature Public/Granted day:2019-03-05
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