- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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申请号： US14925955申请日： 2015-10-28
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公开(公告)号： US20170125297A1公开(公告)日： 2017-05-04
- 发明人: Chih-Chung Wang , Shih-Yin Hsiao , Wen-Fang Lee , Nien-Chung Li , Shu-Wen Lin
- 申请人： UNITED MICROELECTRONICS CORP.
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/28 ; H01L21/3105 ; H01L27/088 ; H01L21/321 ; H01L29/49 ; H01L29/06 ; H01L29/66 ; H01L21/3213
摘要：
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a logic region and high-voltage (HV) region; forming a first gate structure on the logic region and a second gate structure on the HV region; forming an interlayer dielectric (ILD) layer around the first gate structure and the second gate structure; forming a patterned hard mask on the HV region; and transforming the first gate structure into a metal gate.
公开/授权文献
- US09852952B2 Semiconductor device and method for fabricating the same 公开/授权日：2017-12-26
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