发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US15123404申请日： 2015-01-29
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公开(公告)号： US20170077216A1公开(公告)日： 2017-03-16
- 发明人: Kenji KOUNO
- 申请人： DENSO CORPORATION
- 优先权： JP2014-61813 20140325
- 国际申请： PCT/JP2015/000393 WO 20150129
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/739 ; H01L21/22 ; H01L29/10 ; H01L29/66 ; H01L27/06 ; H01L29/861
摘要：
A semiconductor device includes a semiconductor substrate with: a drift layer; a base layer; and a collector layer and a cathode layer. In the semiconductor substrate, when a region operating as an IGBT device is an IGBT region and a region operating as a diode device is a diode region, the IGBT and diode regions are arranged alternately in a repetitive manner; a damaged region is arranged on a surface portion of the diode region in the semiconductor substrate. The IGBT and diode regions are demarcated by a boundary between the collector and cathode layers; and a surface portion of the IGBT region includes: a portion having the damaged region at a boundary side with the diode region; and another portion without the damaged region arranged closer to an inner periphery side relative to the boundary side.
公开/授权文献
- US10056450B2 Semiconductor device 公开/授权日：2018-08-21
信息查询
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