Invention Application
- Patent Title: Substrate Resistor and Method of Making Same
- Patent Title (中): 基板电阻及其制作方法
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Application No.: US15351139Application Date: 2016-11-14
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Publication No.: US20170062578A1Publication Date: 2017-03-02
- Inventor: Hua Feng Chen , Shu-Hui Wang , Mu-Chi Chiang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Main IPC: H01L29/43
- IPC: H01L29/43 ; H01L29/49 ; H01L29/06 ; H01L27/06 ; H01L29/161 ; H01L29/16 ; H01L29/165 ; H01L29/78 ; H01L49/02 ; H01L29/08
Abstract:
A semiconductor structure can include a resistor on a substrate formed simultaneously with other devices, such as transistors. A diffusion barrier layer formed on a substrate is patterned to form a resistor and barrier layers under a transistor gate. A filler material, a first connector, and a second connector are formed on the resistor at the same manner and time as the gate of the transistor. The filler material is removed to form a resistor on a substrate.
Public/Granted literature
- US10297669B2 Substrate resistor and method of making same Public/Granted day:2019-05-21
Information query
IPC分类:
