Invention Application
US20170005005A1 FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
审中-公开
FIN场效应晶体管（FINFET）器件结构及其形成方法
- Patent Title: FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Patent Title (中): FIN场效应晶体管（FINFET）器件结构及其形成方法
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Application No.: US14942491Application Date: 2015-11-16
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Publication No.: US20170005005A1Publication Date: 2017-01-05
- Inventor: Chang-Yin CHEN , Chai-Wei CHANG , Yi-Jen CHEN , Bo-Feng YOUNG
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/423 ; H01L29/06 ; H01L29/66 ; H01L27/088 ; H01L21/283 ; H01L21/31 ; H01L21/311 ; H01L21/3213 ; H01L29/78 ; H01L21/762
Abstract:
A FinFET device structure and method for forming the same are provided. The FinFET device structure includes a fin structure formed over a substrate and a gate structure traversing over the fin structure. The gate structure includes a gate electrode layer which includes an upper portion above the fin structure and a lower portion below the fin structure, the virtual surface is formed between the upper portion and the lower portion, and the lower portion has a tapered width which is gradually tapered from the virtual interface to a bottom surface of the lower portion.
Public/Granted literature
- US10269651B2 Fin field effect transistor (FinFET) device structure and method for forming the same Public/Granted day:2019-04-23
Information query
IPC分类:
