Invention Application
US20160276459A1 FAST SWITCHING IGBT WITH EMBEDDED EMITTER SHORTING CONTACTS AND METHOD FOR MAKING SAME
审中-公开
具有嵌入式发射器短接触头的快速开关IGBT及其制造方法
- Patent Title: FAST SWITCHING IGBT WITH EMBEDDED EMITTER SHORTING CONTACTS AND METHOD FOR MAKING SAME
- Patent Title (中): 具有嵌入式发射器短接触头的快速开关IGBT及其制造方法
-
Application No.: US15168524Application Date: 2016-05-31
-
Publication No.: US20160276459A1Publication Date: 2016-09-22
- Inventor: Jacek Korec , John Manning Savidge Neilson , Sameer Pendharkar
- Applicant: Texas Instruments Incorporated
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/02 ; H01L21/3205 ; H01L29/739
Abstract:
Integrated circuits are presented having high voltage IGBTs with integral emitter shorts and fabrication processes using wafer bonding or grown epitaxial silicon for controlled drift region thickness and fast switching speed.
Public/Granted literature
- US09941383B2 Fast switching IGBT with embedded emitter shorting contacts and method for making same Public/Granted day:2018-04-10
Information query
IPC分类:
