发明申请
- 专利标题： Semiconductor Structure with Active Device and Damaged Region
- 专利标题（中）： 半导体结构与有源器件和损坏区域
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申请号： US14521327申请日： 2014-10-22
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公开(公告)号： US20160118406A1公开(公告)日： 2016-04-28
- 发明人: Paul A. Nygaard , Michael A. Stuber
- 申请人： QUALCOMM SWITCH CORP.
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L29/872 ; H01L29/78 ; H01L29/47 ; H01L21/3205 ; H01L21/84 ; H01L29/32 ; H01L29/10 ; H01L21/265 ; H01L27/06 ; H01L29/66
摘要：
A semiconductor structure is formed with an active layer having an active device including a body region. The active device is formed by top side processing in and on a top side of a semiconductor on insulator wafer. A damaged region is formed within a portion of the body region by bottom side processing at a bottom side of the semiconductor on insulator wafer, the damaged region having a structure sufficient to prevent a kink effect and self-latching in operation of the active device.
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