Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US14864781Application Date: 2015-09-24
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Publication No.: US20160087069A1Publication Date: 2016-03-24
- Inventor: Hidekazu ODA
- Applicant: Renesas Electronics Corporation
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Priority: JP2014-193986 20140924
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/16 ; H01L29/06 ; H01L21/762 ; H01L21/265 ; H01L29/167 ; H01L29/78 ; H01L29/36 ; H01L21/324
Abstract:
A semiconductor device includes an SOI substrate and a MISFET formed on the SOI substrate. The SOI substrate has a base substrate, a ground plane region formed on the base substrate, a BOX layer formed on the ground plane region and an SOI layer formed on the BOX layer. The base substrate is made of silicon and the ground plane region includes a semiconductor region made of silicon carbide.
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Information query
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