Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US14463676Application Date: 2014-08-20
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Publication No.: US20160020323A1Publication Date: 2016-01-21
- Inventor: Yen-Liang Wu , Chung-Fu Chang , Yu-Hsiang Hung , Wen-Jiun Shen , Ssu-I Fu , Man-Ling Lu , Chia-Jong Liu , Yi-Wei Chen
- Applicant: United Microelectronics Corp.
- Priority: CN201410337946.7 20140716
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66
Abstract:
A semiconductor device includes a fin structure, an insulating structure, a protruding structure, an epitaxial structure, and a gate structure. The fin structure and the insulating structure are disposed on the substrate. The protruding structure is in direct contact with the substrate and partially protrudes from the insulating structure, and the protruding structure is the fin structure. The epitaxial structure is disposed on a top surface of the fin structure and completely covers the top surface of the fin structure. In addition, the epitaxial structure has a curved top surface. The gate structure covers the fin structure and the epitaxial structure.
Public/Granted literature
- US09224864B1 Semiconductor device and method of fabricating the same Public/Granted day:2015-12-29
Information query
IPC分类:
