Invention Application
- Patent Title: MOS FIELD EFFECT TRANSISTOR
- Patent Title (中): MOS场效应晶体管
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Application No.: US14413435Application Date: 2012-07-09
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Publication No.: US20150179744A1Publication Date: 2015-06-25
- Inventor: Toshiyuki Mine , Yasuhiro Shimamoto , Hirotaka Hamamura
- Applicant: Toshiyuki Mine , Yasuhiro Shimamoto , Hirotaka Hamamura
- Applicant Address: JP Tokyo
- Assignee: HITACHI , LTD.
- Current Assignee: HITACHI , LTD.
- Current Assignee Address: JP Tokyo
- International Application: PCT/JP2012/067421 WO 20120709
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L29/51 ; H01L29/423 ; H01L29/78 ; H01L29/10
Abstract:
The present invention is to cause high channel mobility and a high threshold voltage to coexist in a SiC-MOSFET power device which uses a SiC substrate. The SiC MOSFET which is provided with a layered insulation film having electric charge trap characteristics on a gate insulation film has an irregular threshold voltage in a channel length direction of the SiC MOSFET, and in particular, has a shorter area having a maximum threshold voltage in the channel length direction compared to an area having other threshold voltages.
Public/Granted literature
- US09318558B2 MOS field effect transistor Public/Granted day:2016-04-19
Information query
IPC分类:
