Invention Application
- Patent Title: FIN STRUCTURE
- Patent Title (中): FIN结构
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Application No.: US14092942Application Date: 2013-11-28
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Publication No.: US20150145067A1Publication Date: 2015-05-28
- Inventor: Chin-I Liao , Chun-Yu Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu City
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu City
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A fin structure includes a substrate and a fin disposed on a top surface of the substrate. The fin has a height. An epitaxial structure surrounds the fin and the epitaxial structure has a top point which is the farthest point on the epitaxial structure away from the top surface of the substrate. There is a distance between the top point and the top surface of the substrate. A rational number of the distance to the height is not less than 7.
Information query
IPC分类:
