发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题(中): 半导体器件及其制造方法
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申请号: US14269585申请日: 2014-05-05
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公开(公告)号: US20150092379A1公开(公告)日: 2015-04-02
- 发明人: Naoki YOSHIMATSU , Masayoshi SHINKAI , Taketoshi SHIKANO , Daisuke MURATA , Nobuyoshi KIMOTO , Yuji IMOTO , Mikio ISHIHARA
- 申请人: Mitsubishi Electric Corporation
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 优先权: JP2013-202995 20130930
- 主分类号: H05K1/18
- IPC分类号: H05K1/18 ; H05K3/06 ; H05K3/20 ; H05K1/03
摘要:
A semiconductor device according to the present invention includes a ceramic substrate, a plurality of circuit patterns arranged on a surface of the ceramic substrate, a semiconductor element arranged on an upper surface of at least one circuit pattern, and a sealing resin for sealing the ceramic substrate, the plurality of circuit patterns, and the semiconductor element, in which an undercut part is formed in opposed side surfaces of the circuit patterns adjacent to one another, the undercut part is configured such that an end of an upper surface of the circuit pattern protrudes outside the circuit pattern more than an end of a lower surface of the circuit pattern on the ceramic substrate, and the undercut part is also filled with the sealing resin.
公开/授权文献
- US10104775B2 Semiconductor device and method for manufacturing the same 公开/授权日:2018-10-16
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