IGBT and diode are formed with optimal electrical characteristics on the same semiconductor substrate. IGBT region and FWD region are provided on the same semiconductor substrate. There are a plurality of trenches at predetermined intervals in the front surface of an n− type semiconductor substrate, and P-type channel regions at predetermined intervals in the longitudinal direction of the trench between neighboring trenches, thereby configuring a MOS gate. The p-type channel region and n− type drift region are alternately disposed in longitudinal direction of the trench in the IGBT region. The p-type channel region and a p− type spacer region are alternately disposed in the longitudinal direction of the trench in the FWD region. Pitch in longitudinal direction of the trench of p-type channel region in the IGBT region is shorter than pitch in longitudinal direction of the trench of p-type channel region in the FWD region.