Invention Application
US20140027782A1 SEMICONDUCTOR DEVICE AND METHOD FOR REDUCED BIAS TEMPERATURE INSTABILITY (BTI) IN SILICON CARBIDE DEVICES
有权
半导体器件及其在半导体器件中降低偏温不稳定性（BTI）的方法
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD FOR REDUCED BIAS TEMPERATURE INSTABILITY (BTI) IN SILICON CARBIDE DEVICES
- Patent Title (中): 半导体器件及其在半导体器件中降低偏温不稳定性（BTI）的方法
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Application No.: US13562029Application Date: 2012-07-30
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Publication No.: US20140027782A1Publication Date: 2014-01-30
- Inventor: Joseph Darryl Michael , Stephen Daley Arthur
- Applicant: Joseph Darryl Michael , Stephen Daley Arthur
- Applicant Address: US NY Schenectady
- Assignee: GENERAL ELECTRIC COMPANY
- Current Assignee: GENERAL ELECTRIC COMPANY
- Current Assignee Address: US NY Schenectady
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L29/78 ; H01L29/16
Abstract:
A system includes a silicon carbide (SiC) semiconductor device and a hermetically sealed packaging enclosing the SiC semiconductor device. The hermetically sealed packaging is configured to maintain a particular atmosphere near the SiC semiconductor device. Further, the particular atmosphere limits a shift in a threshold voltage of the SiC semiconductor device to less than 1 V during operation.
Public/Granted literature
- US09576868B2 Semiconductor device and method for reduced bias temperature instability (BTI) in silicon carbide devices Public/Granted day:2017-02-21
Information query
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