发明申请
- 专利标题： SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME
- 专利标题（中）： 半导体结构及其制造方法
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申请号： US13367382申请日： 2012-02-07
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公开(公告)号： US20130200470A1公开(公告)日： 2013-08-08
- 发明人: An-Chi Liu , Chun-Hsien Lin , Yu-Cheng Tung , Chien-Ting Lin , Wen-Tai Chiang , Shih-Hung Tsai , Ssu-I Fu , Ying-Tsung Chen , Chih-Wei Chen
- 申请人： An-Chi Liu , Chun-Hsien Lin , Yu-Cheng Tung , Chien-Ting Lin , Wen-Tai Chiang , Shih-Hung Tsai , Ssu-I Fu , Ying-Tsung Chen , Chih-Wei Chen
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A semiconductor structure and a method of fabricating the same comprising the steps of providing a substrate, forming at least one fin structure on said substrate, forming a gate covering said fin structure, forming a plurality of epitaxial structures covering said fin structures, performing a gate pullback process to reduce the critical dimension (CD) of said gate and separate said gate and said epitaxial structures, forming lightly doped drains (LDD) in said fin structures, and forming a spacer on said gate and said fin structures.
公开/授权文献
- US08664060B2 Semiconductor structure and method of fabricating the same 公开/授权日：2014-03-04
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