发明申请
- 专利标题： RESISTOR AND FABRICATION METHOD THEREOF
- 专利标题（中）： 电阻及其制造方法
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申请号： US13342995申请日： 2012-01-04
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公开(公告)号： US20130168816A1公开(公告)日： 2013-07-04
- 发明人: Chih-Kai Kang , Sheng-Yuan Hsueh , Shu-Hsuan Chih , Po-Kuang Hsieh , Chia-Chen Sun , Po-Cheng Huang , Shih-Chieh Hsu , Chi-Horn Pai , Yao-Chang Wang , Jie-Ning Yang , Chi-Sheng Tseng , Po-Jui Liao , Kuang-Hung Huang , Shih-Chang Chang
- 申请人： Chih-Kai Kang , Sheng-Yuan Hsueh , Shu-Hsuan Chih , Po-Kuang Hsieh , Chia-Chen Sun , Po-Cheng Huang , Shih-Chieh Hsu , Chi-Horn Pai , Yao-Chang Wang , Jie-Ning Yang , Chi-Sheng Tseng , Po-Jui Liao , Kuang-Hung Huang , Shih-Chang Chang
- 主分类号： H01L29/02
- IPC分类号： H01L29/02 ; H01L21/20
摘要：
The present invention provides a structure of a resistor comprising: a substrate having an interfacial layer thereon; a resistor trench formed in the interfacial layer; at least a work function metal layer covering the surface of the resistor trench; at least two metal bulks located at two ends of the resistor trench and adjacent to the work function metal layer; and a filler formed between the two metal bulks inside the resistor trench, wherein the metal bulks are direct in contact with the filler.
公开/授权文献
- US09147678B2 Resistor and fabrication method thereof 公开/授权日：2015-09-29
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