- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF
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申请号： US13473991申请日： 2012-05-17
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公开(公告)号： US20130082283A1公开(公告)日： 2013-04-04
- 发明人: Takami OTSUKI , Taichi OBARA , Akira GOTO
- 申请人： Takami OTSUKI , Taichi OBARA , Akira GOTO
- 申请人地址： JP Chiyoda-ku
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Chiyoda-ku
- 优先权： JP2011-214412 20110929
- 主分类号： H01L29/16
- IPC分类号： H01L29/16 ; H01L29/02 ; H01L21/768 ; H01L23/48
摘要：
A semiconductor device includes an insulating substrate, a wiring pattern formed on the insulating substrate, a semiconductor chip secured to the wiring pattern, a junction terminal formed of the same material as the wiring pattern and electrically connected to the semiconductor chip, one end of the junction terminal being secured to the insulating substrate, the other end of the junction terminal extending upward away from the insulating substrate, and a control circuit for transmitting a control signal for the semiconductor chip, the control circuit being electrically connected to the junction terminal.
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