发明申请
- 专利标题： Deposition On A Nanowire Using Atomic Layer Deposition
- 专利标题（中）： 使用原子层沉积在纳米线上沉积
-
申请号： US13013067申请日： 2011-01-25
-
公开(公告)号： US20120187375A1公开(公告)日： 2012-07-26
- 发明人: Dechao Guo , Zhengwen Li , Kejia Wang , Zhen Zhang , Yu Zhu
- 申请人： Dechao Guo , Zhengwen Li , Kejia Wang , Zhen Zhang , Yu Zhu
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/775
- IPC分类号： H01L29/775 ; H01L21/335 ; B82Y99/00
摘要：
In one exemplary embodiment, a method includes: providing a semiconductor device having a substrate, a nanowire, a first structure and a second structure, where the nanowire is suspended between the first structure and the second structure, where the first structure and the second structure overly the substrate; and performing atomic layer deposition to deposit a film on at least a portion of the semiconductor device, where performing atomic layer deposition to deposit the film includes performing atomic layer deposition to deposit the film on at least a surface of the nanowire.
公开/授权文献
- US08900935B2 Deposition on a nanowire using atomic layer deposition 公开/授权日：2014-12-02
信息查询
IPC分类:
