Invention Application
- Patent Title: Bottom electrode for MRAM device
- Patent Title (中): MRAM器件底电极
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Application No.: US12927670Application Date: 2010-11-19
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Publication No.: US20110133300A1Publication Date: 2011-06-09
- Inventor: Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
- Applicant: Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
- Assignee: MagIC Technologies, Inc.
- Current Assignee: MagIC Technologies, Inc.
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
A multi-layered bottom electrode for an MTJ device on a silicon nitride substrate is described. It comprises a bilayer of alpha tantalum on ruthenium which in turn lies on a nickel chrome layer over a second tantalum layer.
Public/Granted literature
- US08969982B2 Bottom electrode for MRAM device Public/Granted day:2015-03-03
Information query
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