Invention Application
- Patent Title: SUPER JUNCTION TRENCH POWER MOSFET DEVICES
- Patent Title (中): 超级连接功率MOSFET器件
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Application No.: US12548841Application Date: 2009-08-27
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Publication No.: US20110049614A1Publication Date: 2011-03-03
- Inventor: Yang Gao , Kyle Terrill , Deva Pattanayak , Kuo-In Chen , The-Tu Chau , Sharon Shi , Qufei Chen
- Applicant: Yang Gao , Kyle Terrill , Deva Pattanayak , Kuo-In Chen , The-Tu Chau , Sharon Shi , Qufei Chen
- Applicant Address: US CA Santa Clara
- Assignee: VISHAY-SILICONIX
- Current Assignee: VISHAY-SILICONIX
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
In a super junction trench power MOSFET (metal oxide semiconductor field effect transistor) device, a column of p-type dopant in the super junction is separated from a first column of n-type dopant by a first column of oxide and from a second column of n-type dopant by a second column of oxide. In an n-channel device, a gate element for the FET is advantageously situated over the column of p-type dopant; and in a p-channel device, a gate element for the FET is advantageously situated over the column of n-type dopant.
Public/Granted literature
- US09425306B2 Super junction trench power MOSFET devices Public/Granted day:2016-08-23
Information query
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