Invention Application
- Patent Title: SEMICONDUCTOR APPARATUS AND FABRICATION METHOD THEREOF
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US12858929Application Date: 2010-08-18
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Publication No.: US20110042816A1Publication Date: 2011-02-24
- Inventor: Hitoshi Fujiwara , Takayasu Horasawa , Kenichi Kazama
- Applicant: Hitoshi Fujiwara , Takayasu Horasawa , Kenichi Kazama
- Applicant Address: JP Tokyo JP Osaka
- Assignee: FUJI ELECTRIC SYSTEMS CO., LTD.,C. UYEMURA & CO., LTD.
- Current Assignee: FUJI ELECTRIC SYSTEMS CO., LTD.,C. UYEMURA & CO., LTD.
- Current Assignee Address: JP Tokyo JP Osaka
- Priority: JP2009-191502 20090820
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/44
Abstract:
A semiconductor apparatus includes an aluminum electrode film formed on a semiconductor chip; and a nickel plated layer formed on the aluminum electrode film, wherein a concentration of sodium and potassium present in the nickel plated layer and at an interface between the nickel plated layer and the aluminum electrode film is 3.20×1014 atoms/cm2 or less.
Public/Granted literature
- US08338954B2 Semiconductor apparatus and fabrication method thereof Public/Granted day:2012-12-25
Information query
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