发明申请
US20070026590A1 Dynamic Schottky barrier MOSFET device and method of manufacture
审中-公开
动态肖特基势垒MOSFET器件及其制造方法
- 专利标题： Dynamic Schottky barrier MOSFET device and method of manufacture
- 专利标题（中）： 动态肖特基势垒MOSFET器件及其制造方法
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申请号： US11543631申请日： 2006-10-05
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公开(公告)号： US20070026590A1公开(公告)日： 2007-02-01
- 发明人: John Snyder , John Larson
- 申请人： John Snyder , John Larson
- 专利权人： Spinnaker Semiconductor, Inc.
- 当前专利权人： Spinnaker Semiconductor, Inc.
- 主分类号： H01L31/07
- IPC分类号： H01L31/07 ; H01L27/095 ; H01L31/108 ; H01L29/47 ; H01L29/812 ; H01L21/338
摘要：
A device for regulating a flow of electric current and its manufacturing method are provided. The device includes metal-insulator-semiconductor source-drain contacts forming Schottky barrier or Schottky-like junctions to the semiconductor substrate. The device includes an interfacial layer between the semiconductor substrate and a metal source and/or drain electrode, thereby dynamically adjusting a Schottky barrier height by applying different bias conditions. The dynamic Schottky barrier modulation provides increased electric current for low drain bias conditions, reducing the sub-linear turn-on characteristic of Schottky barrier MOSFET devices and improving device performance.
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