Invention Application
US20050139860A1 Dynamic schottky barrier MOSFET device and method of manufacture
审中-公开
动态肖特基势垒MOSFET器件及其制造方法
- Patent Title: Dynamic schottky barrier MOSFET device and method of manufacture
- Patent Title (中): 动态肖特基势垒MOSFET器件及其制造方法
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Application No.: US10970688Application Date: 2004-10-21
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Publication No.: US20050139860A1Publication Date: 2005-06-30
- Inventor: John Snyder , John Larson
- Applicant: John Snyder , John Larson
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/06 ; H01L29/08 ; H01L29/78 ; H01L29/74 ; H01L21/425
Abstract:
A device for regulating a flow of electric current and its manufacturing method are provided. The device includes metal-insulator-semiconductor source-drain contacts forming Schottky barrier or Schottky-like junctions to the semiconductor substrate. The device includes an interfacial layer between the semiconductor substrate and a metal source and/or drain electrode, thereby dynamically adjusting a Schottky barrier height by applying different bias conditions. The dynamic Schottky barrier modulation provides increased electric current for low drain bias conditions, reducing the sub-linear turn-on characteristic of Schottky barrier MOSFET devices and improving device performance.
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