发明申请
- 专利标题： Heat treatment jig for semiconductor substrate and method of heat treating semiconductor substrate
- 专利标题（中）： 半导体基板用热处理夹具及半导体基板的热处理方法
-
申请号： US10750883申请日： 2004-01-05
-
公开(公告)号： US20050098877A1公开(公告)日： 2005-05-12
- 发明人: Naoshi Adachi , Kazushi Yoshida , Yoshiro Aoki
- 申请人： Naoshi Adachi , Kazushi Yoshida , Yoshiro Aoki
- 优先权： JP2003-378724 20031107
- 主分类号： H01L21/673
- IPC分类号： H01L21/673 ; H01L21/48 ; H01L23/34
摘要：
When a two-division structure heat treatment jig for semiconductor substrate that includes a silicon first jig that comes into direct contact with a semiconductor substrate that is heat treated and supports the semiconductor substrate, and a second jig (holder) that holds the first jig and is mounted on a heat treatment boat is adopted as a heat treatment boat of a vertical heat treatment furnace, the stress concentrated during the heat treatment on a particular portion of the semiconductor substrate can be reduced; in the case of a semiconductor substrate large in the tare stress and having an outer shape of 300 mm being heat treated, or even in the case of the heat treatment being carried out under very high temperature conditions, the slips can be suppressed from occurring. The present invention can be widely applied as a stable heat treatment method of semiconductor substrates.
公开/授权文献
- US07329947B2 Heat treatment jig for semiconductor substrate 公开/授权日：2008-02-12
信息查询
IPC分类:
