发明申请
- 专利标题： Field effect transistor with electroplated metal gate
- 专利标题（中）： 具有电镀金属栅极的场效应晶体管
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申请号： US10694793申请日： 2003-10-29
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公开(公告)号： US20050095852A1公开(公告)日： 2005-05-05
- 发明人: Katherine Saenger , Cyril Cabral , Emanuel Cooper , Hariklia Deligianni , Panayotis Andricacos , Philippe Vereecken
- 申请人： Katherine Saenger , Cyril Cabral , Emanuel Cooper , Hariklia Deligianni , Panayotis Andricacos , Philippe Vereecken
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines
- 当前专利权人： International Business Machines
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/288 ; H01L21/336 ; H01L29/49 ; H01L29/78 ; H01L29/745 ; H01L21/44 ; H01L29/76
摘要：
Disclosed is a method for making a metal gate for a FET, wherein the metal gate comprises at least some material deposited by electroplating as well as an FET device comprising a metal gate that is at least partially plated. Further disclosed is a method for making a metal gate for a FET wherein the metal gate comprises at least some plated material and the method comprises the steps of: selecting a substrate having a top surface and a recessed region; conformally depositing a thin conductive seed layer on the substrate; and electroplating a filler gate metal on the seed layer to fill and overfill the recessed region.
公开/授权文献
- US06967131B2 Field effect transistor with electroplated metal gate 公开/授权日：2005-11-22
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