发明申请
US20050037520A1 Method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer
有权
当与高度结晶的种子层集成时，获得PCMO薄膜上的可逆电阻开关的方法
- 专利标题： Method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer
- 专利标题（中）： 当与高度结晶的种子层集成时，获得PCMO薄膜上的可逆电阻开关的方法
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申请号： US10640770申请日： 2003-08-13
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公开(公告)号： US20050037520A1公开(公告)日： 2005-02-17
- 发明人: Wei-Wei Zhuang , Tingkai Li , David Evans , Sheng Hsu , Wei Pan
- 申请人： Wei-Wei Zhuang , Tingkai Li , David Evans , Sheng Hsu , Wei Pan
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/20 ; H01L21/822 ; H01L45/00 ; H01L21/00
摘要：
A method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer includes depositing, by MOCVD, a seed layer of PCMO, in highly crystalline form, thin film, having a thickness of between about 50 Å to 300 Å, depositing a second PCMO thin film layer on the seed layer, by spin coating, having a thickness of between about 500 Å to 3000 Å, to form a combined PCMO layer; increasing the resistance of the combined PCMO film in a semiconductor device by applying a negative electric pulse of between about −4V to −5V, having a pulse width of between about 75 nsec to 1 μsec; and decreasing the resistance of the combined PCMO layer in a semiconductor device by applying a positive electric pulse of between about +2.5V to +4V, having a pulse width greater than 2.0 μsec.
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