发明申请
US20050009329A1 Semiconductor chip production method, semiconductor device production method, semiconductor chip, and semiconductor device
有权
半导体芯片生产方法，半导体器件制造方法，半导体芯片和半导体器件
- 专利标题： Semiconductor chip production method, semiconductor device production method, semiconductor chip, and semiconductor device
- 专利标题（中）： 半导体芯片生产方法，半导体器件制造方法，半导体芯片和半导体器件
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申请号： US10840677申请日： 2004-05-07
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公开(公告)号： US20050009329A1公开(公告)日： 2005-01-13
- 发明人: Kazumasa Tanida , Yoshihiko Nemoto , Naotaka Tanaka
- 申请人： Kazumasa Tanida , Yoshihiko Nemoto , Naotaka Tanaka
- 优先权： JP2003-134810 20030513
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/3205 ; H01L21/60 ; H01L21/768 ; H01L23/12 ; H01L23/31 ; H01L23/48 ; H01L25/065 ; H01L25/07 ; H01L25/18 ; H01L21/44 ; H01L21/4763 ; H01L21/48
摘要：
A semiconductor chip production method including the steps of: forming a front side recess in a semiconductor substrate; depositing a metal material in the front side recess to form a front side electrode electrically connected to a functional device formed on the front surface; removing a rear surface portion of the semiconductor substrate to reduce the thickness of the semiconductor substrate to a thickness greater than the depth of the front side recess; forming a rear side recess communicating with the front side recess in the rear surface of the semiconductor substrate after the thickness reducing step; and depositing a metal material in the rear side recess to form a rear side electrode electrically connected to the front side electrode for formation of a through-electrode.
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