Invention Grant
- Patent Title: Low resistivity tungsten film and method of manufacture
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Application No.: US17002220Application Date: 2020-08-25
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Publication No.: US12191198B2Publication Date: 2025-01-07
- Inventor: Feihu Wang , Joung Joo Lee , Xi Cen , Zhibo Yuan , Wei Lei , Kai Wu , Chunming Zhou , Zhebo Chen
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/285 ; H01L23/532 ; H01L21/02 ; H01L23/528
Abstract:
Apparatus and methods to provide electronic devices comprising tungsten film stacks are provided. A tungsten liner formed by physical vapor deposition is filled with a tungsten film formed by chemical vapor deposition directly over the tungsten liner.
Public/Granted literature
- US20220068709A1 Low Resistivity Tungsten Film And Method Of Manufacture Public/Granted day:2022-03-03
Information query
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