Invention Grant
- Patent Title: Field assisted interfacial diffusion doping through heterostructure design
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Application No.: US17166962Application Date: 2021-02-03
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Publication No.: US12142642B2Publication Date: 2024-11-12
- Inventor: Joel Basile Varley , Noah Patrick Allen , Clint Frye , Kyoung Eun Kweon , Vincenzo Lordi , Lars Voss
- Applicant: Lawrence Livermore National Security, LLC
- Applicant Address: US CA Livermore
- Assignee: Lawrence Livermore National Security, LLC
- Current Assignee: Lawrence Livermore National Security, LLC
- Current Assignee Address: US CA Livermore
- Agency: Zilka-Kotab, P.C.
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L21/225 ; H01L29/45
Abstract:
An apparatus includes a heterostructure including a substrate of Group-III-nitride material, a source layer including a dopant positioned on a surface of the substrate, and a conductive cap layer positioned on the source layer. A method of electric field-enhanced impurity diffusion includes obtaining a heterostructure including a substrate of Group-III-nitride semiconductor material, a source layer including a dopant positioned directly on the substrate, and a conductive cap layer positioned above the source layer, and applying a thermal annealing treatment to the heterostructure. An electric field gradient is established within the source layer and the cap layer for causing diffusion of an element from the substrate to the cap layer, and for causing diffusion of the dopant from the source layer to a former location of the element in the substrate thereby changing a conductivity and/or magnetic characteristic of the substrate.
Public/Granted literature
- US20210257463A1 FIELD ASSISTED INTERFACIAL DIFFUSION DOPING THROUGH HETEROSTRUCTURE DESIGN Public/Granted day:2021-08-19
Information query
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