Invention Grant
- Patent Title: Integrated photodetector with direct binning pixel
-
Application No.: US18330295Application Date: 2023-06-06
-
Publication No.: US12111261B2Publication Date: 2024-10-08
- Inventor: Jonathan M. Rothberg , Keith G. Fife , David M. Boisvert
- Applicant: Quantum-Si Incorporated
- Applicant Address: US CT Guilford
- Assignee: Quantum-Si Incorporated
- Current Assignee: Quantum-Si Incorporated
- Current Assignee Address: US CT Branford
- Agency: Wolf, Greenfield & Sacks, P.C.
- Main IPC: G01N21/64
- IPC: G01N21/64 ; C12Q1/6869 ; G01S7/4865 ; H01L27/146 ; H01L27/148 ; H04N25/77

Abstract:
An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers directly into the at least one charge carrier storage region based upon times at which the charge carriers are produced.
Public/Granted literature
- US20240019370A1 INTEGRATED PHOTODETECTOR WITH DIRECT BINNING PIXEL Public/Granted day:2024-01-18
Information query