- 专利标题： Semiconductor device
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申请号： US17517941申请日： 2021-11-03
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公开(公告)号： US12080795B2公开(公告)日： 2024-09-03
- 发明人: Sung Min Kim
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 代理机构： Muir Patent Law, PLLC
- 优先权： KR 20210044038 2021.04.05
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L23/528 ; H01L27/088 ; H01L29/06 ; H01L29/417
摘要：
A semiconductor device includes a base substrate, a first electrode plate on the base substrate, a first power rail on the first electrode plate, the first power rail extending in a first horizontal direction and overlapping the first electrode plate in a vertical direction, a second power rail on the first electrode plate, the second power rail extending in the first horizontal direction and overlapping the first electrode plate in the vertical direction, and the second power rail being spaced apart from the first power rail in a second horizontal direction different from the first horizontal direction, a first power rail contact electrically connecting the first electrode plate and the first power rail, an insulating layer on the base substrate to surround the first electrode plate, the first power rail, and the second power rail, and a gate electrode extending in the second horizontal direction on the insulating layer.
公开/授权文献
- US20220320329A1 SEMICONDUCTOR DEVICE 公开/授权日：2022-10-06
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