Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US17370543Application Date: 2021-07-08
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Publication No.: US12057506B2Publication Date: 2024-08-06
- Inventor: Chia-Ming Hsu , Da-Wen Lin , Clement Hsingjen Wann
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/762 ; H01L29/417 ; H01L29/66
Abstract:
A semiconductor device includes a substrate, an isolation structure, a semiconductor fin, a semiconductor layer, and a gate structure. The isolation structure is disposed over the substrate. The semiconductor fin extends from the substrate and in contact with the isolation structure. The semiconductor layer is disposed on and in contact with the isolation structure. The gate structure covers the semiconductor layer and spaced apart from the semiconductor fin.
Public/Granted literature
- US20230008020A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2023-01-12
Information query
IPC分类:
