- 专利标题： Semiconductor devices and methods of manufacturing thereof
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申请号： US18322294申请日： 2023-05-23
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公开(公告)号： US12046515B2公开(公告)日： 2024-07-23
- 发明人: Shih-Yao Lin , Hsiao Wen Lee , Chih-Han Lin
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： FOLEY & LARDNER LLP
- 分案原申请号： US17245537 2021.04.30
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L27/088
摘要：
A semiconductor device may be formed by forming a first fin and a second fin in a first area and a second area of a substrate, respectively; which may be followed by forming of a first dummy gate structure and a second dummy gate structure straddling the first fin and second fin, respectively and forming a sacrificial layer extending along a bottom portion of the second dummy gate structure. The first dummy gate structure may be replaced with a first metal gate structure, while the second dummy gate structure and the sacrificial layer may be replaced with a second metal gate structure.
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