A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The gate stack includes a gate dielectric layer, a first metal-containing layer, a silicon-containing layer, a second metal-containing layer, and a gate electrode layer sequentially stacked over the substrate, the silicon-containing layer is between the first metal-containing layer and the second metal-containing layer, and the silicon-containing layer includes an oxide material.