- 专利标题： Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height
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申请号： US17931052申请日： 2022-09-09
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公开(公告)号： US12034078B2公开(公告)日： 2024-07-09
- 发明人: Paul A. Clifton , Andreas Goebel , Walter A. Harrison
- 申请人： Acorn Semi, LLC
- 申请人地址： US CA Palo Alto
- 专利权人： Acorn Semi, LLC
- 当前专利权人： Acorn Semi, LLC
- 当前专利权人地址： US CA Palo Alto
- 代理机构： Ascenda Law Group, PC
- 分案原申请号： US15816231 2017.11.17
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; B82Y10/00 ; H01L29/06 ; H01L29/08 ; H01L29/417 ; H01L29/423 ; H01L29/775 ; H01L29/78 ; H01L29/786
摘要：
A nanowire transistor includes undoped source and drain regions electrically coupled with a channel region. A source stack that is electrically isolated from a gate conductor includes an interfacial layer and a source conductor, and is coaxially wrapped completely around the source region, extending along at least a portion of the source region. A Schottky barrier between the source conductor and the source region is a negative Schottky barrier and a concentration of free charge carriers is induced in the semiconductor source region.
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