- 专利标题: Bulk acoustic wave resonator with multilayer base
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申请号: US17071810申请日: 2020-10-15
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公开(公告)号: US12021498B2公开(公告)日: 2024-06-25
- 发明人: Liping D. Hou , Alexander M. Vigo , Shing-Kuo Wang
- 申请人: Global Communication Semiconductors, LLC
- 申请人地址: US CA Torrance
- 专利权人: GLOBAL COMMUNICATION SEMICONDUCTORS, LLC
- 当前专利权人: GLOBAL COMMUNICATION SEMICONDUCTORS, LLC
- 当前专利权人地址: US CA Torrance
- 代理机构: Morgan, Lewis & Bockius LLP
- 主分类号: H03H9/02
- IPC分类号: H03H9/02 ; H03H9/13 ; H03H9/17 ; H10N30/00 ; H10N30/85
摘要:
A bulk acoustic (BAW) resonator having a multilayer base and method of fabricating the bulk acoustic resonator is disclosed. A BAW resonator comprises a substrate having a cavity and including a frame around the cavity, a multilayer base adjacent the cavity and supported by the frame. The multilayer base includes a first layer of crystalline material having a first lattice constant and a second layer of crystalline material having a second lattice constant that is distinct from the first lattice constant. The BAW resonator further includes a stack over the multilayer base. The stack includes a first electrode formed on the multilayer base, a piezoelectric layer having a first side coupled to the first electrode and a second side opposite to the first side of the piezoelectric layer, and a second electrode coupled to the second side of the piezoelectric layer.
公开/授权文献
- US20210111699A1 Bulk Acoustic Wave Resonator with Multilayer Base 公开/授权日:2021-04-15
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