- 专利标题: Method of fabricating semiconductor structure
-
申请号: US17874326申请日: 2022-07-27
-
公开(公告)号: US12002721B2公开(公告)日: 2024-06-04
- 发明人: Kuan-Yu Huang , Sung-Hui Huang , Shang-Yun Hou , Chien-Yuan Huang
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: JCIPRNET
- 分案原申请号: US16920408 2020.07.02
- 主分类号: H01L25/065
- IPC分类号: H01L25/065 ; H01L21/52 ; H01L23/04 ; H01L23/31 ; H01L23/538
摘要:
A method of fabricating a semiconductor structure includes providing a first substrate comprising a first side and a second side opposite to the first side. A package is attached to the first side of the first substrate. A second substrate is attached to the second side of the first substrate. A plurality of electrical connectors is bonded between the second side of the first substrate and the second substrate. A lid is attached to the first substrate and the second substrate. The lid includes a ring part and a plurality of overhang parts. The ring part is over the first side of the first substrate. The plurality of overhang parts extends from corner sidewalls of the ring part toward the second substrate. The plurality of overhang parts are laterally aside the plurality of electrical connectors.
公开/授权文献
- US20220375806A1 METHOD OF FABRICATING SEMICONDUCTOR STRUCTURE 公开/授权日:2022-11-24
信息查询
IPC分类: