- 专利标题: Semiconductor device with magnetic tunnel junctions
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申请号: US17346855申请日: 2021-06-14
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公开(公告)号: US11980040B2公开(公告)日: 2024-05-07
- 发明人: Tai-Yen Peng , Tsung-Hsien Chang , Yu-Shu Chen , Chih-Yuan Ting , Jyu-Horng Shieh , Chung-Te Lin
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Slater Matsil, LLP
- 主分类号: H10B61/00
- IPC分类号: H10B61/00 ; H10N50/01 ; H10N50/10 ; G11C11/16
摘要:
A semiconductor device includes a substrate; a memory array over the substrate, the memory array including first magnetic tunnel junctions (MTJs), where the first MTJs are in a first dielectric layer over the substrate; and a resistor circuit over the substrate, the resistor circuit including second MTJs, where the second MTJs are in the first dielectric layer.
公开/授权文献
- US20210313396A1 Semiconductor Device With Magnetic Tunnel Junctions 公开/授权日:2021-10-07
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