Invention Grant
- Patent Title: Robustness-aware NAND flash management
-
Application No.: US17903390Application Date: 2022-09-06
-
Publication No.: US11837298B2Publication Date: 2023-12-05
- Inventor: Gang Zhao , Lin Chen , Jie Chen , Qun Zhao
- Applicant: Innogrit Technologies Co., Ltd.
- Applicant Address: CN Shanghai
- Assignee: INNOGRIT TECHNOLOGIES CO., LTD.
- Current Assignee: INNOGRIT TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Shanghai
- Agency: IPro, PLLC
- Main IPC: G11C16/14
- IPC: G11C16/14 ; G11C16/34 ; G06F12/02 ; G11C16/10 ; G11C16/16 ; G11C16/26

Abstract:
Systems, apparatus and methods are provided for performing program operations in a non-volatile storage system. In one embodiment, there is provided a method that may comprise categorizing active storage blocks of a non-volatile storage device into a robust group and a less-robust group based on a number of factors including page error count, program time and number of Program/Erase (P/E) cycles; determining that a cache program operation needs to be performed; selecting a first storage block from the robust group to perform the cache program operation; determining that a regular program operation needs to be performed; and selecting a second storage block from the less-robust group to perform the regular program operation.
Public/Granted literature
- US20230005554A1 ROBUSTNESS-AWARE NAND FLASH MANAGEMENT Public/Granted day:2023-01-05
Information query